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- 40 Ampere
- Berat 12 Kg

FM RF POWER AMPLIFIER MODULE for VHF BAND
Output Power :80W (Min.)
Power Gain :32.0dB (Min.)
Total Efficiency:45% (Min.)

DESCRIPTION
RD70HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers
applications.

FEATURES
High power and High Gain:
Pout>70W, Gp>10.6dB @Vdd=12.5V,f=175MHz
Pout>50W, Gp>7.0dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ.on VHF Band
High Efficiency: 55%typ.on UHF Band

APPLICATION
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.

-VHF/UHF TX/RX including cross-band split -- operation (not crossband repeat)
-100 Alphanumeric memory channels (Any mix of -VHF/UHF)
-Wire cloning capability
-Direct frequency input from keypad
-Large backlit display and keypad
-39 CTCSS, 104 DCS encode+decode
-DTMF tones and 9 autodial memories
-Tone bursts
-Three scan modes
-Theft Alarm feature
-Wide and narrow FM TX/RX